publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 00 h hs 1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w description rd00hhs1 is a mos fet type transistor specifically designed for hf rf amplifiers applications. features high power g ain pout> 0.3 w , gp> 19 db @vdd=12.5v,f= 30 mhz application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant rd00hhs1 - 101,t113 is a rohs compliant products. this product includes the lead in high melting temperature type solders. how ever, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders ( i.e.tin - lead solder alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 30 v v gss gate to source voltage vds=0v ? 10 v pch channel dissipation t c =25 c 3.1 w pin input power zg=zl=50 ? 10 mw id drain current - 200 ma t ch channel temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 40 c/w note 1: above parameters are guaranteed independen tly. outline drawing lot no. 0.4+/-0.07 1 2 3 0.4+/-0.07 0 . 8 m i n 0.5+/-0.07 1.5+/-0.1 0.1 max 1.5+/-0.1 2 . 5 + / - 0 . 1 type name 1.6+/-0.1 0 . 1 4.4+/-0.1 +0.03 -0.05 terminal no. 1 : gate 2 : sourse 3 : drain unit : mm 0.4 1.5+/-0.1 3 . 9 + / - 0 . 3
< silicon rf power mos fet ( discrete ) > rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w publication date : oct 2011 2 electrical characteristics (tc=25c, unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 25 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th ga te threshold voltage v ds =1 2 v, i ds =1ma 1 2 3 v pout output power 0.3 0.7 - w ? d drain efficiency v dd =12.5v, pin= 4m w, f= 30 mhz ,idq=50ma 55 65 - % note : above parameters , ratings , limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w publication date : oct 2011 3 typical characteristics channel dissipation vs. ambient temperature 0 1 2 3 4 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) . . . on pcb(*1) on pcb(*1) with heat-sink *1:the material of the pcb glass epoxy (t=0.6 mm) vgs-ids characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 vgs(v) i d s ( a ) ta=+25c vds=10v vds-ids characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 vds(v) i d s ( a ) ta=+25c vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=4v vgs=3v vgs=10v vds vs. ciss characteristics 0 5 10 15 20 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 5 10 15 20 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25c f=1mhz vds vs. crss characteristics 0 1 2 3 4 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25c f=1mhz
< silicon rf power mos fet ( discrete ) > rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w publication date : oct 2011 4 typical characteristics pin-po characteristics 10 15 20 25 30 35 -20 -15 -10 -5 0 5 10 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=30mhz vdd=12.5v idq=50ma po gp pin-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 pin(mw) p o u t ( w ) , i d d ( a ) 40 50 60 70 80 90 100 d ( % ) po d idd ta=25c f=30mhz vdd=12.5v idq=50ma vdd-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 12 14 vdd(v) p o ( w ) 0 40 80 120 i d d ( m a ) po idd ta=25c f=30mhz pin=4mw icq=50ma zg=zi=50 ohm vgs-ids charactoristics 2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 vgs(v) i d s ( a ) vds=10v tc=-25~+75c -25c +75c +25c vgs-gm charactoristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 vgs(v) g m ( s ) vds=10v tc=-25~+75c -25c +75c +25c
< silicon rf power mos fet ( discrete ) > rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w publication date : oct 2011 5 test circuit(f=30mhz) rd00hhs1 s-parameter data (@vdd=12.5v, id=50ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 10 1.002 -3.6 12.533 178.3 0.003 90.3 0.920 -2.7 30 1.003 -9.9 12.631 174.6 0.008 82.8 0.919 -6.9 50 1.005 -16.8 12.784 170.6 0.013 79.5 0.918 -11.2 100 1.007 -33.5 12.820 159.1 0.025 67.4 0.898 -22.4 150 0.989 -49.8 12.355 147.5 0.035 56.5 0.866 -32.8 200 0.963 -64.0 11.571 136.8 0.042 47.5 0.824 -42.2 250 0.936 -76.9 10.697 127.3 0.048 38.2 0.781 -50.4 300 0.911 -87.9 9.791 119.1 0.053 30.6 0.745 -57.9 350 0.892 -97.7 8.972 111.4 0.055 24.6 0.711 -64.6 400 0.872 -106.2 8.202 104.9 0.057 18.5 0.685 -70.2 450 0.857 -113.7 7.533 98.9 0.058 13.1 0.665 -75.5 500 0.846 -120.1 6.921 93.4 0.058 8.7 0.649 -80.5 550 0.834 -126.0 6.386 88.4 0.059 4.7 0.640 -85.2 600 0.830 -131.0 5.894 83.7 0.058 0.2 0.630 -89.2 650 0.826 -135.9 5.484 79.3 0.057 -2.8 0.625 -93.3 700 0.821 -140.2 5.097 75.1 0.056 -6.9 0.623 -97.1 750 0.815 -144.0 4.749 71.0 0.055 -9.8 0.623 -100.7 800 0.812 -147.5 4.443 67.3 0.053 -13.0 0.623 -104.3 850 0.814 -151.0 4.167 63.8 0.051 -15.0 0.627 -107.7 900 0.816 -153.9 3.904 60.1 0.049 -17.6 0.630 -110.9 950 0.811 -156.8 3.670 56.8 0.048 -20.8 0.634 -113.9 1000 0.814 -159.5 3.471 53.7 0.046 -22.2 0.640 -117.1 s22 s12 s21 s11 7.0mm 22.0mm 470pf 1k c2 13.0mm 6.0mm rd00hhs1 l1 220pf 3.0mm vdd vgg pin pout 15pf l2 4.0mm l4 l3 14.0mm note:boad material glass epoxi substrate micro strip line width=1.0mm 50 ohm er:4.8 t=0.6mm l1 lal04nar27(0.27 h) l2 lal04nar39(0.39 h) l3 lal04nar39(0.39 h) l4 lal04na1r0(1 h) c1 c2:100 f 0.022 f 0.1 f in parallel 18mm 330 f 50v 2.5mm 470pf 180pf 9.0mm 9.0mm 7.0mm 15pf c1 10 f 50v 7.5mm 15 15pf 3pf 8.0mm
< silicon rf power mos fet ( discrete ) > rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w publication date : oct 2011 6 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w publication date : oct 2011 7 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give du e consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regardin g these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property right s, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagr ams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorize d m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (h ttp: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a fin al decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconduc tors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor w hen considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? plea se contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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